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ONSEMI - BCP56T1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1 A, 1.5 W, SOT-223, Surface Mount
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 80V
- Transition Frequency ft: 130MHz
- Power Dissipation Pd: 1.5W
- DC Collector Current: 1A
- DC Current Gain hFE: 250hFE
- Transistor Case Style: SOT-223
- No. of Pins: 4Pins
- Operating Temperature Max: 150°C
- Product Range: BCxxx Series
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 500mV
- Complementary Device: BCP53T1
- Continuous Collector Current Ic Max: 1A
- Current Ic Continuous a Max: 500mA
- Current Ic hFE: 150mA
- Gain Bandwidth ft Typ: 130MHz
- Hfe Min: 40
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Pin Configuration: B(1), C(2+4), E(3)
- Power Dissipation Ptot Max: 1.5W
- Termination Type: Surface Mount Device
- Voltage Vcbo: 100V