MMBTH10LT1G Transistor, NPN ONSEMI

ONSEMIUGS :MMBTH10LT1G Code de commande:1459112

Prix:
Prix ​​promotionnel€0,25

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Stock:
En stock (8839 unité)

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description

ONSEMI - MMBTH10LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 25 V, 4 mA, 225 mW, SOT-23, Surface Mount

  • Transistor Polarity: NPN
  • Collector Emitter Voltage V(br)ceo: 25V
  • Transition Frequency ft: 650MHz
  • Power Dissipation Pd: 225mW
  • DC Collector Current: 4mA
  • DC Current Gain hFE: 60hFE
  • Transistor Case Style: SOT-23
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C
  • Product Range: MMBTxxxx Series
  • Automotive Qualification Standard: AEC-Q101
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (27-Jun-2018)
  • Collector Emitter Saturation Voltage Vce(on): 500mV
  • Current Ic Continuous a Max: 4A
  • Gain Bandwidth ft Typ: 650MHz
  • Hfe Min: 60
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Ptot Max: 300mW
  • Termination Type: Surface Mount Device

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