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description
ROHM - US6M1TR - Dual MOSFET, N Channel, 30 V, 1 A, 0.38 ohm, TUMT, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 1A
- Drain Source Voltage Vds: 30V
- On Resistance Rds(on): 0.38ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2.5V
- Power Dissipation Pd: 1W
- Transistor Case Style: TUMT
- No. of Pins: 6Pins
- Operating Temperature Max: -
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- Capacitance Ciss Typ: 70pF
- Continuous Drain Current Id, N Channel: 1.4A
- Continuous Drain Current Id, P Channel: 1A
- Current Id Max: 1.4A
- Drain Source Voltage Vds, N Channel: 30V
- Drain Source Voltage Vds, P Channel: -20V
- Fall Time tf: 8ns
- Module Configuration: Dual
- On Resistance Rds(on), N Channel: 0.17ohm
- On Resistance Rds(on), P Channel: 0.28ohm
- Pulse Current Idm: 4A
- Rise Time: 6ns
- Termination Type: Surface Mount Device
- Voltage Vds Typ: 30V
- Voltage Vgs Rds on Measurement: 4V
- Voltage Vgs th Max: 2.5V
- Voltage Vgs th Min: 1V