SIR882DP-T1-GE3 MOSFET,N Ch,Diode,100V,60A,PPAKSO8 Vishay

VISHAYUGS :SIR882DP-T1-GE3 Code de commande:1859000

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description

VISHAY - SIR882DP-T1-GE3 - Power MOSFET, N Channel, 100 V, 60 A, 0.0071 ohm, PowerPAK SO, Surface Mount

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 60A
  • Drain Source Voltage Vds: 100V
  • On Resistance Rds(on): 0.0071ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 1.2V
  • Power Dissipation Pd: 5.4W
  • Transistor Case Style: PowerPAK SO
  • No. of Pins: 8Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • Current Id Max: 17.6A
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C
  • Voltage Vgs Max: 20V

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