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VISHAY - SIHB12N50E-GE3 - Power MOSFET, N Channel, 500 V, 10.5 A, 0.33 ohm, TO-263 (D2PAK), Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 10.5A
- Drain Source Voltage Vds: 500V
- On Resistance Rds(on): 0.33ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4V
- Power Dissipation Pd: 114W
- Transistor Case Style: TO-263
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: E Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited