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description
ROHM - SCT2H12NYTB - Silicon Carbide Power MOSFET, N Channel, 4 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 4A
- Drain Source Voltage Vds: 1.7kV
- On Resistance Rds(on): 1.15ohm
- Rds(on) Test Voltage Vgs: 18V
- Threshold Voltage Vgs: 2.8V
- Power Dissipation Pd: 44W
- Transistor Case Style: TO-268
- No. of Pins: 2Pins
- Operating Temperature Max: 175°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)