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description
ROHM - RQ3E080GNTB - Power MOSFET, N Channel, 30 V, 18 A, 0.0129 ohm, HSMT, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 18A
- Drain Source Voltage Vds: 30V
- On Resistance Rds(on): 0.0129ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2.5V
- Power Dissipation Pd: 14W
- Transistor Case Style: HSMT
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)