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ONSEMI - MMUN2216LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm
- Digital Transistor Polarity: Single NPN
- Collector Emitter Voltage V(br)ceo: 50V
- Continuous Collector Current Ic: 100mA
- Base Input Resistor R1: 4.7kohm
- Base-Emitter Resistor R2: -
- Resistor Ratio, R1 / R2: -
- RF Transistor Case: SOT-23
- No. of Pins: 3 Pin
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): -250mV
- Continuous Collector Current Ic Max: 100mA
- Current Ic Continuous a Max: 100mA
- Current Ic hFE: 5mA
- DC Collector Current: 100mA
- DC Current Gain hFE: 350hFE
- Hfe Min: 160
- No. of Pins: 3Pins
- No. of Transistors: 1
- Operating Temperature Max: 150°C
- Operating Temperature Min: -55°C
- Pin Configuration: 2
- Power Dissipation Pd: 246mW
- Power Dissipation Ptot Max: 200mW
- Resistance R1: 4.7kohm
- SMD Marking: A8F
- Transistor Case Style: SOT-23
- Transistor Type: Bias Resistor (BRT)
- Voltage Vcbo: 50V
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