MMDT5551-7-F Transistor, NPN/NPN, SOT363 Diodes Inc.

DIODES INC.UGS :MMDT5551-7-F Code de commande:1773597

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Prix ​​promotionnel€0,38

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En stock (114949 unité)

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description

DIODES INC. - MMDT5551-7-F - Bipolar Transistor Array, Dual, NPN, 160 V, 200 mA, 200 mW, 80 hFE, SOT-363

  • Transistor Polarity: NPN
  • Collector Emitter Voltage V(br)ceo: 160V
  • Power Dissipation Pd: 200mW
  • DC Collector Current: 200mA
  • DC Current Gain hFE: 80hFE
  • Transistor Case Style: SOT-363
  • No. of Pins: 6Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (15-Jan-2019)
  • Collector Emitter Saturation Voltage Vce(on): 200mV
  • Current Ic Continuous a Max: 200mA
  • Gain Bandwidth ft Typ: 300MHz
  • Hfe Min: 80
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C
  • Termination Type: Surface Mount Device
  • Transistor Type: Small Signal

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