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ONSEMI - MJW21196G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 250 V, 16 A, 200 W, TO-247, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 250V
- Transition Frequency ft: -
- Power Dissipation Pd: 200W
- DC Collector Current: 16A
- DC Current Gain hFE: 20hFE
- Transistor Case Style: TO-247
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 3VDC
- Continuous Collector Current Ic Max: 16A
- Current Ic Continuous a Max: 16A
- Current Ic hFE: 80mA
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 4MHz
- Gain Bandwidth ft Typ: 4MHz
- Hfe Min: 20
- No. of Transistors: 1
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 200W
- Termination Type: Through Hole
- Transistor Type: Power Bipolar
- Voltage Vcbo: 400V