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ONSEMI - MJE13007G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 400 V, 8 A, 80 W, TO-220, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 400V
- Transition Frequency ft: 14MHz
- Power Dissipation Pd: 80W
- DC Collector Current: 8A
- DC Current Gain hFE: 4hFE
- Transistor Case Style: TO-220
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: Lead (27-Jun-2018)
- Application Code: PHVS
- Collector Emitter Saturation Voltage Vce(on): 1.5V
- Continuous Collector Current Ic Max: 8A
- Current Ic @ Vce Sat: 5A
- Current Ic Continuous a Max: 5A
- Current Ic hFE: 5mA
- Fall Time @ Ic: 700ms
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 4MHz
- Gain Bandwidth ft Typ: 14MHz
- Hfe Min: 5
- No. of Transistors: 1
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 80W
- Voltage Vcbo: 10VDC
- Voltage Vces: 700V