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ONSEMI - MJ11016G - Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 30 A, 200 W, TO-204AA, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 120V
- Transition Frequency ft: -
- Power Dissipation Pd: 200W
- DC Collector Current: 30A
- DC Current Gain hFE: 1000hFE
- Transistor Case Style: TO-204AA
- No. of Pins: 2Pins
- Operating Temperature Max: 200°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: Lead (27-Jun-2018)
- Alternate Case Style: TO-204AA
- Av Current Ic: 30A
- Collector Emitter Saturation Voltage Vce(on): 3V
- Continuous Collector Current Ic Max: 30A
- Current Ic Continuous a Max: 30A
- Current Ic hFE: 20A
- Device Marking: MJ11016
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 4MHz
- Hfe Min: 1000
- No. of Transistors: 1
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +200°C
- Power Dissipation Ptot Max: 200W
- Transistor Type: Darlington
- Voltage Vcbo: 120V