Documents et téléchargements
description
IXYS SEMICONDUCTOR - IXFN200N10P - Power MOSFET, PolarFET, N Channel, 100 V, 200 A, 0.0075 ohm, ISOTOP, Module
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 200A
- Drain Source Voltage Vds: 100V
- On Resistance Rds(on): 0.0075ohm
- Rds(on) Test Voltage Vgs: 15V
- Threshold Voltage Vgs: 5V
- Power Dissipation Pd: 680W
- Transistor Case Style: ISOTOP
- No. of Pins: 4Pins
- Operating Temperature Max: 175°C
- Product Range: Polar(TM) HiPerFET
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (12-Jan-2017)
- Capacitance Ciss Typ: 7600pF
- Current Id Max: 200A
- Junction to Case Thermal Resistance A: 0.22°C/W
- N-channel Gate Charge: 235nC
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +175°C
- Reverse Recovery Time trr Max: 150ns
- Termination Type: Screw
- Voltage Vds Typ: 100V
- Voltage Vgs Max: 20V
- Voltage Vgs Rds on Measurement: 10V