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IXYS SEMICONDUCTOR - IXFH36N60P - Power MOSFET, N Channel, 600 V, 36 A, 0.19 ohm, TO-247, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 36A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 0.19ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 5V
- Power Dissipation Pd: 650W
- Transistor Case Style: TO-247
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (12-Jan-2017)
- Capacitance Ciss Typ: 5800pF
- Current Id Max: 36A
- Junction to Case Thermal Resistance A: 0.19°C/W
- N-channel Gate Charge: 102nC
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Reverse Recovery Time trr Max: 200ns
- Termination Type: Through Hole
- Voltage Vds Typ: 600V
- Voltage Vgs Max: 30V
- Voltage Vgs Rds on Measurement: 10V