description
INFINEON - FF900R12IE4PBOSA1 - IGBT Module, Dual [Half Bridge], 900 A, 1.7 V, 5.1 kW, 150 °C, Module
- Transistor Polarity: N Channel
- DC Collector Current: 900A
- Collector Emitter Saturation Voltage Vce(on): 1.7V
- Power Dissipation Pd: 5.1kW
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Transistor Case Style: Module
- No. of Pins: -
- Operating Temperature Max: 150°C
- Product Range: PrimePACK 2 Series
- SVHC: No SVHC (27-Jun-2018)