FF200R17KE4HOSA1 IGBT Module, Dual NPN, 1.95V, 310A INFINEON

INFINEON - FF200R17KE4HOSA1 - IGBT Module, Dual, 310 A, 1.95 V, 1.25 kW, 150 °C, Module

• Transistor Polarity: Dual NPN
• DC Collector Current: 310A
• Collector Emitter Saturation Voltage Vce(on): 1.95V
• Power Dissipation Pd: 1.25kW
• Collector Emitter Voltage V(br)ceo: 1.7kV
• Transistor Case Style: Module
• No. of Pins: 7Pins
• Operating Temperature Max: 150°C
• Product Range: -
• SVHC: No SVHC (27-Jun-2018)
• Operating Temperature Min: -40°C