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ONSEMI - FDS8949 - Dual MOSFET, N Channel, 40 V, 6 A, 0.029 ohm, SOIC, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 6A
- Drain Source Voltage Vds: 40V
- On Resistance Rds(on): 0.029ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 1.9V
- Power Dissipation Pd: 2W
- Transistor Case Style: SOIC
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Avalanche Single Pulse Energy Eas: 26mJ
- Capacitance Ciss Typ: 715pF
- Continuous Drain Current Id, N Channel: 6A
- Current Id Max: 6A
- Drain Source Voltage Vds, N Channel: 40V
- Module Configuration: Dual
- On Resistance Rds(on), N Channel: 0.021ohm
- On State Resistance Max: 29mohm
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pin Configuration: D1(5,6), D2(7,8), G1(4), S1(3), G2(2), S2(1)
- Pulse Current Idm: 20A
- Termination Type: Surface Mount Device
- Voltage Vds Typ: 40V
- Voltage Vgs Max: 20V
- Voltage Vgs Rds on Measurement: 10V
- Voltage Vgs th Max: 3V
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