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ONSEMI - FDC6305N - Dual MOSFET, N Channel, 20 V, 2.7 A, 0.08 ohm, SuperSOT, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 2.7A
- Drain Source Voltage Vds: 20V
- On Resistance Rds(on): 0.08ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 900mV
- Power Dissipation Pd: 900mW
- Transistor Case Style: SuperSOT
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Continuous Drain Current Id, N Channel: 2.7A
- Current Id Max: 2.7A
- Drain Source Voltage Vds, N Channel: 20V
- Module Configuration: Dual
- No. of Transistors: 2
- On Resistance Rds(on), N Channel: 0.06ohm
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pulse Current Idm: 1A
- SMD Marking: FCD6305N
- Uni / Bi Directional Polarity: NN
- Voltage Vds: 20V
- Voltage Vds Typ: 20V
- Voltage Vgs Max: 900mV
- Voltage Vgs Rds on Measurement: 4.5V
- Voltage Vgs th Max: 1.5V