description
ONSEMI - FCP165N65S3 - Power MOSFET, N Channel, 650 V, 19 A, 0.14 ohm, TO-220, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 19A
- Drain Source Voltage Vds: 650V
- On Resistance Rds(on): 0.14ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4.5V
- Power Dissipation Pd: 154W
- Transistor Case Style: TO-220
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: SUPERFET III Series
- Automotive Qualification Standard: -
- MSL: -
- SVHC: Lead (27-Jun-2018)