description
ONSEMI - FCD4N60TM - Power MOSFET, N Channel, 600 V, 3.9 A, 1 ohm, TO-252 (DPAK), Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 3.9A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 1ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 5V
- Power Dissipation Pd: 50W
- Transistor Case Style: TO-252
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: SuperFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)