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DMG6602SVTQ-7 - Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 ohm - DIODES INC.
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DMG6602SVTQ-7 - Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 ohm - DIODES INC.

DMG6602SVTQ-7 - Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 ohm - DIODES INC.

DIODES INC.UGS :DMG6602SVTQ-7 Code de commande:3127320
Prix:
€2,85

Prix par conditionnement de 5 pièces

incl. T.V.A. Calcul des frais d'expédition à la caisse

Stock:
Rupture de stock

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Description

  • Automotive Qualification Standard: AEC-Q101
  • Channel Type: Complementary N and P Channel
  • Continuous Drain Current Id: 3.4A
  • Continuous Drain Current Id N Channel: 3.4A
  • Continuous Drain Current Id P Channel: 3.4A
  • Drain Source On State Resistance N Channel: 0.038ohm
  • Drain Source On State Resistance P Channel: 0.038ohm
  • Drain Source Voltage Vds: 30V
  • Drain Source Voltage Vds N Channel: 30V
  • Drain Source Voltage Vds P Channel: 30V
  • Gate Source Threshold Voltage Max: 2.3V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 6Pins
  • On Resistance Rds(on): 0.038ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation N Channel: 840mW
  • Power Dissipation P Channel: 840mW
  • Power Dissipation Pd: 840mW
  • Product Range: -
  • Qualification: AEC-Q101
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TSOT-26
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Complementary N and P Channel

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