BC857BDW1T1G Bipolar Transistor ONSEMI

ONSEMIUGS :BC857BDW1T1G Code de commande:1653608

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description

ONSEMI - BC857BDW1T1G - Bipolar Transistor Array, General Purpose, PNP, -45 V, 100 mA, 380 mW, 150 hFE, SOT-363

  • Transistor Polarity: PNP
  • Collector Emitter Voltage V(br)ceo: -45V
  • Power Dissipation Pd: 380mW
  • DC Collector Current: 100mA
  • DC Current Gain hFE: 150hFE
  • Transistor Case Style: SOT-363
  • No. of Pins: 6Pins
  • Operating Temperature Max: 150°C
  • Product Range: BCxxx Series
  • Automotive Qualification Standard: AEC-Q101
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (27-Jun-2018)
  • Collector Emitter Saturation Voltage Vce(on): 220V
  • Current Ic Continuous a Max: -100mA
  • Gain Bandwidth ft Typ: 100MHz
  • Hfe Min: 475
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C
  • Termination Type: Surface Mount Device
  • Transistor Type: General Purpose

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