description
NXP - AFT31150NR5 - RF FET Transistor, LDMOS, 65 VDC, 741 W, 2.7 GHz, 3.1 GHz, OM-780
- Drain Source Voltage Vds: 65VDC
- Continuous Drain Current Id: -
- Power Dissipation Pd: 741W
- Operating Frequency Min: 2.7GHz
- Operating Frequency Max: 3.1GHz
- RF Transistor Case: OM-780
- No. of Pins: 2Pins
- Operating Temperature Max: 150°C
- Product Range: -
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (15-Jan-2019)