GAN063-650WSAQ - Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole - NEXPERIA

NEXPERIASKU: GAN063-650WSAQ Order code: 3106435

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Sale price€21,21

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In stock (14 units), ready to be shipped

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Description

  • Continuous Drain Current Id: 34.5A
  • Drain Source On State Resistance: 0.06ohm
  • Drain Source Voltage Vds: 650V
  • No. of Pins: 3Pins
  • On Resistance Rds(on) Max: 0.06ohm
  • Product Range: -
  • Qualification: AEC-Q101
  • Transistor Case Style: TP-247
  • Transistor Mounting: Through Hole
  • Typical Gate Charge: 15nC

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