SISS05DN-T1-GE3 - Power MOSFET, P Channel, 30 V, 108 A, 0.0028 ohm, PowerPAK 1212, Surface Mount - VISHAY

VISHAYUGS :SISS05DN-T1-GE3 Code de commande:3131943

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Description

  • Automotive Qualification Standard: -
  • Channel Type: P Channel
  • Continuous Drain Current Id: 108A
  • Drain Source On State Resistance: 0.0028ohm
  • Drain Source Voltage Vds: 30V
  • Gate Source Threshold Voltage Max: 2.2V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 8Pins
  • On Resistance Rds(on): 0.0028ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 65.7W
  • Power Dissipation Pd: 65.7W
  • Product Range: TrenchFET
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: PowerPAK 1212
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: P Channel

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