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VISHAY - SIHB23N60E-GE3 - Power MOSFET, N Channel, 600 V, 23 A, 0.132 ohm, TO-263 (D2PAK), Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 23A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 0.132ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: -
- Power Dissipation Pd: 227W
- Transistor Case Style: TO-263
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- Operating Temperature Min: -55°C