NTBG022N120M3S - Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.022 ohm, TO-263HV (D2PAK) - ONSEMI

ONSEMIUGS :NTBG022N120M3S Code de commande:4036812

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description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 58A
  • Drain Source On State Resistance: 0.022ohm
  • Drain Source Voltage Vds: 1.2kV
  • Gate Source Threshold Voltage Max: 2.72V
  • MOSFET Module Configuration: Single
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 7Pins
  • On Resistance Rds(on): 0.022ohm
  • Operating Temperature Max: 175°C
  • Power Dissipation: 234W
  • Power Dissipation Pd: 234W
  • Product Range: PW Series
  • Rds(on) Test Voltage: 18V
  • Transistor Case Style: TO-263HV (D2PAK)
  • Transistor Polarity: N Channel

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