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ONSEMI - MJD127G - Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 8 A, 1.75 W, TO-252 (DPAK), Surface Mount
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -100V
- Transition Frequency ft: -
- Power Dissipation Pd: 1.75W
- DC Collector Current: -8A
- DC Current Gain hFE: 12hFE
- Transistor Case Style: TO-252
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)
- Av Current Ic: 8A
- Collector Emitter Saturation Voltage Vce(on): -2V
- Continuous Collector Current Ic Max: 8A
- Current Ic Continuous a Max: 8A
- Current Ic hFE: 4A
- Device Marking: MJD127
- External Depth: 10.5mm
- External Length / Height: 2.55mm
- External Width: 6.8mm
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 4MHz
- Hfe Min: 1000
- No. of Transistors: 1
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 20W
- SMD Marking: MJD127
- Transistor Type: Darlington
- Voltage Vcbo: 100V