description
VISHAY - IRFBE30SPBF - MOSFET, N, 800V, 4.1A, D2-PAK
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 4.1A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 1.2ohm
- Threshold Voltage Vgs Typ: 4V
- Power Dissipation Pd: 130W
- Transistor Case Style: D2-PAK
- SVHC: No SVHC (20-Jun-2011)
- Alternate Case Style: D2-PAK
- Junction to Case Thermal Resistance A: 1°C/W
- On State resistance @ Vgs = 10V: 1.2ohm
- Package / Case: D2-PAK
- Power Dissipation Pd: 130W
- Power Dissipation Pd: 125W
- Pulse Current Idm: 16A
- Termination Type: SMD
- Voltage Vds: 600V
- Voltage Vds Typ: 800V
- Voltage Vgs Rds on Measurement: 10V
- Voltage Vgs th Max: 4V