HGT1S10N120BNST IGBT, Single, 1.2kV, 35A, TO-263AB-3 ONSEMI

ONSEMI - HGT1S10N120BNST - IGBT, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 Pins

• DC Collector Current: 35A
• Collector Emitter Saturation Voltage Vce(on): 2.45V
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-263AB
• No. of Pins: 3Pins
• Operating Temperature Max: 150°C
• Product Range: -
• Automotive Qualification Standard: -
• MSL: MSL 1 - Unlimited
• SVHC: Lead (27-Jun-2018)