G3R30MT12J - Silicon Carbide MOSFET, Single, N Channel, 96 A, 1.2 kV, 0.03 ohm, TO-263 (D2PAK) - GENESIC SEMICONDUCTOR

GENESIC SEMICONDUCTORUGS :G3R30MT12J Code de commande:3598630

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description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 96A
  • Drain Source On State Resistance: 0.03ohm
  • Drain Source Voltage Vds: 1.2kV
  • Gate Source Threshold Voltage Max: 2.69V
  • MOSFET Module Configuration: Single
  • No. of Pins: 7Pins
  • On Resistance Rds(on): 0.03ohm
  • Operating Temperature Max: 175°C
  • Power Dissipation: 459W
  • Power Dissipation Pd: 459W
  • Product Range: G3R
  • Rds(on) Test Voltage: 15V
  • Transistor Case Style: TO-263 (D2PAK)
  • Transistor Polarity: N Channel

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