description
NXP - BFU580GX - Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 1 W, 30 mA, SOT-223
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 12V
- Transition Frequency ft: 11GHz
- Power Dissipation Pd: 1W
- DC Collector Current: 30mA
- DC Current Gain hFE: 95hFE
- RF Transistor Case: SOT-223
- No. of Pins: 4Pins
- Operating Temperature Max: 150°C
- Product Range: BFU580G Series
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)