Omschrijving
STARPOWER - GD200HFY120C2S - IGBT Module, Half Bridge, 309 A, 2 V, 1.006 kW, 150 °C, Module
- Transistor Polarity: Dual N Channel
- DC Collector Current: 309A
- Collector Emitter Saturation Voltage Vce(on): 2V
- Power Dissipation Pd: 1.006kW
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Transistor Case Style: Module
- No. of Pins: 11Pins
- Operating Temperature Max: 150°C
- Product Range: -
- SVHC: No SVHC (27-Jun-2018)